Spectroscopy of low-lying valley states in hot Si/SiGe quantum dots
Mesoscale and Nanoscale Physics
2026-07-13 v1 Quantum Physics
Abstract
The presence of low-lying valley states in Si may hinder the development of large-scale spin-based quantum processors. Rapid prototyping of novel Si/SiGe heterostructures and gate stacks will be central to identifying pathways that increase the valley splitting. We compare the performance of pulsed-gate spectroscopy (PGS) and detuning axis spectroscopy (DAPS) at temperatures up to 700 mK. We find that DAPS outperforms PGS, with DAPS resolving valley splittings as small as ~86 eV, while the energy resolution of PGS is only ~210~eV. Our work demonstrates that DAPS can be used to efficiently extract valley splittings at elevated temperatures in high throughput cryostats.
Keywords
Cite
@article{arxiv.2607.11048,
title = {Spectroscopy of low-lying valley states in hot Si/SiGe quantum dots},
author = {Connor Nasseraddin and Heun Mo Yoo and Tanner M. Janda and Jason R. Petta},
journal= {arXiv preprint arXiv:2607.11048},
year = {2026}
}