The step edges on the Si(553)-Au surface undergo a 1 x 3 reconstruction at low temperature which has recently been interpreted theoretically as the x3 ordering of spin-polarized silicon atoms at the edges of the graphitic Si nanowires on this vicinal surface. This predicted magnetic ground state has a clear spectroscopic signature - a silicon step-edge state at 0.5 eV above the Fermi level - that arises from strong exchange splitting and hence would not occur without spin polarization. Here we report spatially resolved scanning tunneling spectroscopy data for these nanowires. At low temperature we find an unoccupied state at 0.5 eV above every third step edge silicon atom, in excellent agreement with the spin-polarized ground state predicted theoretically. This spin-polarized state survives up to room temperature where the position of the spins rapidly fluctuates among all Si step-edge sites.
@article{arxiv.1401.5519,
title = {Spectroscopic evidence for spin-polarized edge states in graphitic Si nanowires},
author = {P. C. Snijders and P. S. Johnson and N. P. Guisinger and S. C. Erwin and F. J. Himpsel},
journal= {arXiv preprint arXiv:1401.5519},
year = {2014}
}