We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters.
@article{arxiv.2106.07365,
title = {Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization},
author = {Emilio Corte and Selene Sachero and Sviatoslav Ditalia Tchernij and Tobias Lühmann and Sébastien Pezzagna and Paolo Traina and Ivo Pietro Degiovanni and Ekaterina Moreva and Paolo Olivero and Jan Meijer and Marco Genovese and Jacopo Forneris},
journal= {arXiv preprint arXiv:2106.07365},
year = {2021}
}