In this work, we demonstrate that skyrmions can be nucleated in the free layer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriya interactions (DMI) by a spin-polarized current with the assistance of stray fields from the pinned layer. The size, stability and number of created skyrmions can be tuned by either the DMI strength or the stray field distribution. The interaction between the stray field and the DMI effective field is discussed. A device with multi-level tunneling magnetoresistance is proposed, which could pave the ways for skyrmion-MTJ-based multi-bit storage and artificial neural network computation. Our results may facilitate the efficient nucleation and electrical detection of skyrmions.
@article{arxiv.1803.05138,
title = {Skyrmions in magnetic tunnel junctions},
author = {Xueying Zhang and Wenlong Cai and Xichao Zhang and Zilu Wang and Zhi Li and Yu Zhang and Kaihua Cao and Na Lei and Wang Kang and Yue Zhang and Haiming Yu and Yan Zhou and Weisheng Zhao},
journal= {arXiv preprint arXiv:1803.05138},
year = {2018}
}
Comments
4 figure in main text,14 figure in the supplementary information