English

Single Quantum Emitters in Monolayer Semiconductors

Mesoscale and Nanoscale Physics 2014-11-11 v1 Quantum Physics

Abstract

Single quantum emitters (SQEs) are at the heart of quantum optics and photonic quantum information technologies. To date, all demonstrated solid-state single-photon sources are confined in three-dimensional materials. Here, we report a new class of SQEs based on excitons that are spatially localized by defects in two-dimensional tungsten-diselenide monolayers. The optical emission from these SQEs shows narrow linewidths of ~0.13 meV, about two orders of magnitude smaller than that of delocalized valley excitons. Second-order correlation measurements reveal strong photon anti-bunching, unambiguously establishing the single photon nature of the emission. The SQE emission shows two non-degenerate transitions, which are cross-linearly polarized. We assign this fine structure to two excitonic eigen-modes whose degeneracy is lifted by a large ~0.71 meV coupling, likely due to the electron-hole exchange interaction in presence of anisotropy. Magneto-optical measurements also reveal an exciton g-factor of ~8.7, several times larger than that of delocalized valley excitons. In addition to their fundamental importance, establishing new SQEs in 2D quantum materials could give rise to practical advantages in quantum information processing, such as efficient photon extraction and high integratability and scalability.

Keywords

Cite

@article{arxiv.1411.2449,
  title  = {Single Quantum Emitters in Monolayer Semiconductors},
  author = {Yu-Ming He and G. Clark and J. R. Schaibley and Yu He and M. -C. Chen and Y. -J. Wei and X. Ding and Qiang Zhang and Wang Yao and Xiaodong Xu and Chao-Yang Lu and Jian-Wei Pan},
  journal= {arXiv preprint arXiv:1411.2449},
  year   = {2014}
}

Comments

19 pages, 10 figures, including supplementary information

R2 v1 2026-06-22T06:53:31.236Z