Single hole dispersion relation for the real CuO$_2$ plane
Condensed Matter
2009-10-28 v2
Abstract
Dispersion relation for the CuO hole is calculated basing on the {\it generalized} -- model, recently derived from the three-band one. Numerical ranges for all model parameters, , , , and three-site terms , have been strongly justified previously. Physical reasons for their values are also discussed. Self-consistent Born approximation is used for the calculation of the hole dispersion. An excellent agreement between calculated and one obtained from the angle-resolved photoemission experiments is found.
Cite
@article{arxiv.cond-mat/9605154,
title = {Single hole dispersion relation for the real CuO$_2$ plane},
author = {V. I. Belinicher and A. L. Chernyshev and V. A. Shubin},
journal= {arXiv preprint arXiv:cond-mat/9605154},
year = {2009}
}
Comments
3 pages, 2 figures, misprints corrected, wrong figure 2 replaced