English

Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer

Materials Science 2021-06-02 v2 Mesoscale and Nanoscale Physics

Abstract

We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference, ~0.23 eV, between A- and B-steps edges on Cu(111) docking with B6N7 clusters, confirmed by density functional theory calculations.

Keywords

Cite

@article{arxiv.2105.15040,
  title  = {Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer},
  author = {Tse-An Chen and Chih-Piao Chuu and Chien-Chih Tseng and Chao-Kai Wen and H. -S. Philip Wong and Shuangyuan Pan and Rongtan Li and Yanfeng Zhang and Qiang Fu and Boris I. Yakobson and Wen-Hao Chang and Lain-Jong Li},
  journal= {arXiv preprint arXiv:2105.15040},
  year   = {2021}
}