Simulation of radiation damage effect on silicon detectors using RASER
Abstract
Silicon detectors play a crucial role in high energy physics experiments. In future high energy physics experiments, silicon detectors will be exposed to extremely high fluence environment, which can significantly affect their performance. It is important to understand the electrical behavior of detectors after irradiation. In this study, an irradiation simulation framework is constructed in RASER to simulate leakage current and charge collection effciency. The defect parameters are obtained from the Hamburg penta trap model (HPTM). Based on this work, we predict the similar silicon inner tracker which under a ten-year CEPC Higgs mode run can still maintain over 90% charge collection efficiency.
Cite
@article{arxiv.2504.20463,
title = {Simulation of radiation damage effect on silicon detectors using RASER},
author = {Xingchen Li and Chenxi Fu and Hui Li and Zhan Li and Lin Zhu and Congcong Wang and Xiyuan Zhang and Weimin Song and Hui Liang and Cong Liu and Hongbo Wang and Xin Shi and Suyu Xiao},
journal= {arXiv preprint arXiv:2504.20463},
year = {2025}
}
Comments
9 pages, 7 figures, conference https://indico.ihep.ac.cn/event/19794/#54