In this work, we study the effects of mechanical anisotropy in a 2D optomechanical crystal geometry. We fabricate and measure devices with different orientations, showing the dependence of the mechanical spectrum and the optomechanical coupling with the relative angle of the device to the crystallography directions of silicon. Our results show that the device orientation strongly affects its mechanical band structure, which makes the devices more susceptible to fabrication imperfections. Finally, we show that our device is compatible with cryogenic measurements reaching ground state occupancy of 0.2 phonons at mK temperature.
@article{arxiv.2211.10573,
title = {Silicon anisotropy in a bi-dimensional optomechanical cavity},
author = {Cauê M. Kersul and Rodrigo Benevides and Flávio Moraes and Gabriel H. M. de Aguiar and Andreas Wallucks and Simon Gröblacher and Gustavo S. Wiederhecker and Thiago P. Mayer Alegre},
journal= {arXiv preprint arXiv:2211.10573},
year = {2025}
}