Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.
@article{arxiv.1609.03304,
title = {Side gate tunable Josephson junctions at the LaAlO$_3$/SrTiO$_3$ interface},
author = {A. M. R. V. L. Monteiro and D. J. Groenendijk and N. Manca and E. Mulazimoglu and S. Goswami and Ya. Blanter and L. M. K. Vandersypen and A. D. Caviglia},
journal= {arXiv preprint arXiv:1609.03304},
year = {2017}
}