Shining light on short-range atomic ordering in semiconductors alloys
Abstract
The functional properties of semiconductors are typically controlled by tailoring their chemical composition and their state of strain, and by controlling their long-range structural order, including the presence of extended defects such as dislocations. In addition to these approaches, theoretical predictions suggest that short-range order (SRO) of atoms in group-IV semiconductor alloys can modify the bandgap, a defining property of any semiconductor. Herein, a new machine learning enabled, computation-guided methodology for extended X-ray absorption fine structure (EXAFS) analysis of SRO is used to quantify the effects of local atomic order on the bandgap of germanium-tin (GeSn) alloy single crystal nanostructures with well-controlled strain and composition. Correlative analysis of EXAFS and photoluminescence (PL) establishes the relationship between bandgap and the Warren-Cowley short-range order (WC-SRO) parameter of the GeSn alloys. It is further demonstrated that SRO can be tuned over a broad range by post-deposition annealing of the alloy crystals. This work establishes control of SRO as an important design parameter for semiconducting properties and suggests the potential for quantitative measurement and tuning of SRO in other semiconductor alloy systems.
Keywords
Cite
@article{arxiv.2603.27876,
title = {Shining light on short-range atomic ordering in semiconductors alloys},
author = {Anis Attiaoui and Shunda Chen and Joseph C. Woicik and J. Zach Lentz and Liliane M. Vogl and Jarod E. Meyer and Kunal Mukherjee and Andrew Minor and Tianshu Li and Paul C. McIntyre},
journal= {arXiv preprint arXiv:2603.27876},
year = {2026}
}
Comments
10 pages in the main draft, with 4 pages in Methods section. 4 Figures in total