Semiconductor phonon and charge transport Monte Carlo simulation using Geant4
Instrumentation and Detectors
2014-03-21 v1
Abstract
A phonon and charge transport simulation based on the Geant4 Monte Carlo toolkit is presented. The transport code is capable of propagating acoustic phonons, electrons and holes in cryogenic crystals. Anisotropic phonon propagation, oblique carrier propagation and phonon emission by accelerated carriers are all taken into account. The simulation successfully reproduces theoretical predictions and experimental observations such as phonon caustics, heat pulse propagation times and mean carrier drift velocities. Implementation of the transport code using the Geant4 toolkit ensures availability to the wider scientific community.
Cite
@article{arxiv.1403.4984,
title = {Semiconductor phonon and charge transport Monte Carlo simulation using Geant4},
author = {D. Brandt and R. Agnese and P. Redl and K. Schneck and M. Asai and M. Kelsey and D. Faiez and E. Bagli and B. Cabrera and R. Partridge and T. Saab and B. Sadoulet},
journal= {arXiv preprint arXiv:1403.4984},
year = {2014}
}
Comments
5 pages, 5 figures