Semiconductor-Bloch Formalism: Derivation and Application to High-Harmonic Generation from Dirac Fermions
Mesoscale and Nanoscale Physics
2021-03-22 v3 Optics
Abstract
We rederive the semiconductor Bloch equations emphasizing the close link to the Berry connection. Our rigorous derivation reveals the existence of two further contributions to the current, in addition to the frequently considered intraband and polarization-related interband terms. The extra contributions become sizable in situations with strong dephasing or when the dipole-matrix elements are strongly wave-number dependent. We apply the formalism to high-harmonic generation for a Dirac metal. The extra terms add to the frequency-dependent emission intensity (high-harmonic spectrum) significantly at certain frequencies changing the total signal up to a factor of 10.
Keywords
Cite
@article{arxiv.2008.03177,
title = {Semiconductor-Bloch Formalism: Derivation and Application to High-Harmonic Generation from Dirac Fermions},
author = {Jan Wilhelm and Patrick Grössing and Adrian Seith and Jack Crewse and Maximilian Nitsch and Leonard Weigl and Christoph Schmid and Ferdinand Evers},
journal= {arXiv preprint arXiv:2008.03177},
year = {2021}
}