Semi-shunt field emission in electronic devices
Mesoscale and Nanoscale Physics
2015-06-22 v1
Abstract
We introduce a concept of semi-shunts representing needle shaped metallic protrusions shorter than the distance between a device electrodes. Due to the lightening rod type of field enhancement, they induce strong electron emission. We consider the corresponding signature effects in photovoltaic applications; they are: low open circuit voltages and exponentially strong random device leakiness. Comparing the proposed theory with our data for CdTe based solar cells, we conclude that stress can stimulate semi-shunts' growth making them shunting failure precursors. In the meantime, controllable semi-shunts can play a positive role mitigating the back field effects in photovoltaics.
Cite
@article{arxiv.1406.3874,
title = {Semi-shunt field emission in electronic devices},
author = {Victor Karpov and Diana Shvydka},
journal= {arXiv preprint arXiv:1406.3874},
year = {2015}
}
Comments
4 pages, 5 figures