We present a systematic study of the spin and charge dynamics of copper oxide superconductors as a function of carrier concentration x. Our results portray a coherent physical picture, which reveals a quantum critical point at optimum doping (x=xopt), and the formation of an inhomogeneous glassy state at x<xopt. This mechanism is argued to arise as an intrinsic property of doped Mott insulators, and therefore to be largely independent of material quality and level of disorder.
@article{arxiv.cond-mat/0410111,
title = {Self-generated electronic heterogeneity and quantum glassiness in the high temperature superconductors},
author = {C. Panagopoulos and V. Dobrosavljevic},
journal= {arXiv preprint arXiv:cond-mat/0410111},
year = {2009}
}