We present here a self consistent solution of quantum transport, using the Non Equilibrium Green's Function (NEGF) method, and magnetization dynamics, using the Landau-Lifshitz-Gilbert (LLG) formulation. We have applied this model to study current induced magnetic switching due to `spin torque' in a device where the electronic transport is ballistic and the free magnetic layer is sandwiched between two anti-parallel ferromagnetic contacts. The device shows clear hysteretic current-voltage characteristics, at room temperature, with a sharp transition between the bistable states and hence can be used as a non-volatile memory. We show that the proposed design may allow reducing the switching current by an order of magnitude.
@article{arxiv.cond-mat/0606648,
title = {Self Consistent NEGF-LLG Model for Spin-Torque Based Devices},
author = {Sayeef Salahuddin and Supriyo Datta},
journal= {arXiv preprint arXiv:cond-mat/0606648},
year = {2007}
}