Scaling of two dimensional six-contact phase change devices that can perform toggle logic operations is analyzed through 2D electrothermal simulations with dynamic materials modeling, integrated with CMOS access circuitry. Toggle configurations are achieved through a combination of isolation of some contacts from others using amorphous regions and coupling between different regions via thermal crosstalk. Use of thermal crosstalk as a coupling mechanism in a multi-contact device in the memory layer allows implementation of analog routing and digital logic operations at a significantly lower transistor count, with the added benefit of non-volatility. Simulation results show approximately linear improvement in peak current and voltage requirements with thickness scaling.
@article{arxiv.2008.04182,
title = {Scaling of Multi-contact Phase Change Device for Toggle Logic Operations},
author = {Raihan Sayeed Khan and Nadim H. Kanan and Jake Scoggin and Helena Silva and Ali Gokirmak},
journal= {arXiv preprint arXiv:2008.04182},
year = {2020}
}