Quantum emitters in solid-state materials are highly promising building blocks for quantum information processing and communication science. Recently, single-photon emission from van der Waals materials has been reported in transition metal dichalcogenides and hexagonal boron nitride, exhibiting the potential to realize photonic quantum technologies in two-dimensional materials. Here, we report the generation of room temperature single-photon emission from exfoliated and thermally annealed single crystals of van der Waals {\alpha}-MoO3. The second-order correlation function measurement displays a clear photon antibunching, while the luminescence intensity exceeds 0.4 Mcts/s and remains stable under laser excitation. The theoretical calculation suggests that an oxygen vacancy defect is a possible candidate for the observed emitters. Together with photostability and brightness, quantum emitters in {\alpha}-MoO3 provide a new avenue to realize photon-based quantum information science in van der Waals materials.
@article{arxiv.2403.09099,
title = {Room temperature quantum emitters in van der Waals {\alpha}-MoO3},
author = {Jeonghan Lee and Haiyuan Wang and Keun-Yeol Park and Soonsang Huh and Donghan Kim and Mihyang Yu and Changyoung Kim and Kristian Sommer Thygesen and Jieun Lee},
journal= {arXiv preprint arXiv:2403.09099},
year = {2025}
}