Room-temperature high detectivity mid-infrared photodetectors based on black arsenic phosphorus
Abstract
The mid-infrared (MIR) spectral range, pertaining to important applications such as molecular 'fingerprint' imaging, remote sensing, free space telecommunication and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high cost photodetectors requiring cryogenic operation. We report black arsenic-phosphorus-based long wavelength infrared photodetectors with room temperature operation up to 8.2 um, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature specific detectivity higher than 4.9*10^9 Jones was obtained in the 3-5 um range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodector not only exemplify black arsenic-phosphorus as a promising candidate for MIR opto-electronic applications, but also pave the way for a general strategy to suppress 1/f noise in photonic devices.
Keywords
Cite
@article{arxiv.1705.00801,
title = {Room-temperature high detectivity mid-infrared photodetectors based on black arsenic phosphorus},
author = {Mingsheng Long and Anyuan Gao and Peng Wang and Hui Xia and Claudia Ott and Chen Pan and Yajun Fu and Erfu Liu and Xiaoshuang Chen and Wei Lu and Tom Nilges and Jianbin Xu and Xiaomu Wang and Weida Hu and Feng Miao},
journal= {arXiv preprint arXiv:1705.00801},
year = {2017}
}
Comments
To appear in Science Advances; 27 pages, 3 figures, 9 supplementary figures; submitted on Feb. 24th, 2017