Trapped ion hardware has made significant progress recently and is now one of the leading platforms for quantum computing. To construct two-qubit gates in trapped ions, experimental manipulation approaches for ion chains are becoming increasingly prevalent. Given the restricted control technology, how implementing high-fidelity quantum gate operations is crucial. Many works in current pulse design optimization focus on ion-phonon and effective ion-ion coupling while ignoring the higher-order expansion impacts of these two terms brought on by experiment defects. This paper proposed a novel robust quantum control optimization method in trapped ions. By introducing the higher-order terms caused by the error into the optimization cost function, we generated an extremely robust Molmer-Sorensen gate with infidelity below 10−3 under drift noise range ±10 kHz and time noise range ±0.02. Our work reveals the vital role of higher-order coupling terms in trapped ion pulse control optimization, especially the higher ion-ion coupling order, and provides a robust optimization scheme for realizing more efficient entangled states in trapped ion platforms.
@article{arxiv.2211.08150,
title = {Robust quantum control for higher order coupling term in trapped ions},
author = {Jing-Bo Wang},
journal= {arXiv preprint arXiv:2211.08150},
year = {2022}
}