Reversible modulation of orbital occupations via an interface-induced state in metallic manganites
Abstract
The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering inmetal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroelectric polarization on the nanoscale. The change in orbital occupation can be as large as 10%, greatly exceeding that of bulk manganites. This reversible orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use epitaxial thin film growth and scanning transmission electron microscopy to verify this key interfacial polar distortion and discuss the potential of reversible control of orbital polarization via nanoscale ferroelectrics.
Keywords
Cite
@article{arxiv.1409.3672,
title = {Reversible modulation of orbital occupations via an interface-induced state in metallic manganites},
author = {Hanghui Chen and Qiao Qiao and Matthew S. J. Marshall and Alexandru B. Georgescu and Ahmet Gulec and Patrick J. Phillips and Robert F. Klie and Frederick J. Walker and Charles H. Ahn and Sohrab Ismail-Beigi},
journal= {arXiv preprint arXiv:1409.3672},
year = {2016}
}
Comments
This version is to replace the old submission arXiv:1309.2976 (withdrawn). We have made substantial revision and improvement in the new version