X-ray absorption (XAS) and Resonant Inelastic X-ray Scattering (RIXS) spectra of LaPt2Si2 single crystal at the Si L and La N edges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Si s and d local partial density of states (LPDOS), and the La spectra are due to quasi-atomic local 4f excitations. Calculations show that Pt d-LPDOS dominates the occupied states, and a sharp localized La f state is found in the unoccupied states, in line with the observations.
@article{arxiv.2202.11587,
title = {Resonant Soft X-Ray Scattering on LaPt$_2$Si$_2$},
author = {Deepak John Mukkattukavil and Johan Hellsvik and Anirudha Ghosh and Evanthia Chatzigeorgiou and Elisabetta Nocerino and Qisi Wang and Karin von Arx and Shih-Wen Huang and Victor Ekholm and Zakir Hossain and Arumugum Thamizhavel and Johan Chang and Martin Mansson and Lars Nordstrom and Conny Sathe and Marcus Agaker and Jan-Erik Rubensson and Yasmine Sassa},
journal= {arXiv preprint arXiv:2202.11587},
year = {2022}
}