We suggest indirect excitons in 2D semiconductor heterostructures as a platform for realization of a bosonic analog of the Bardeen-Cooper-Schrieffer superconductor. The quantum phase transition to a biexcitonic gapped state can be controlled in situ by tuning the electric field applied to the structure in the growth direction. The proposed playground should allow one to go to strongly correlated and high-temperature regimes, unattainable with Feshbach resonant atomic gases.
@article{arxiv.1601.07968,
title = {Resonant Pairing of Excitons in Semiconductor Heterostructures},
author = {Sergey V. Andreev},
journal= {arXiv preprint arXiv:1601.07968},
year = {2016}
}