Resonant impurity states in chemically disordered half-Heusler Dirac semimetals
Materials Science
2016-05-03 v1
Abstract
We address the electron transport characteristics in bulk half-Heusler alloys with their compositions tuned to the borderline between topologically nontrivial semi-metallic and trivial semiconducting phases. The precise first-principles calculations based on the coherent potential approximation (CPA) reveal that all the studied systems exhibit sets of dispersionless impurity-like resonant levels, with one of them being located right at the Dirac point. By means of the Kubo formalism we reveal that the residual conductivity of these alloys is strongly suppressed by impurity scattering, whereas the spin Hall conductivity exhibits a large value which is comparable to that of Pt, thereby leading to divergent spin Hall angles.
Keywords
Cite
@article{arxiv.1510.06935,
title = {Resonant impurity states in chemically disordered half-Heusler Dirac semimetals},
author = {J. Kiss and S. W. D'Souza and L. Wollmann and C. Felser and K. Chadova and D. Ködderitzsch and J. Minár and H. Ebert and S. Chadov},
journal= {arXiv preprint arXiv:1510.06935},
year = {2016}
}