Reply to cond-mat/0111504
Materials Science
2007-05-23 v1 Disordered Systems and Neural Networks
Abstract
We show that the choice of the sign of the hopping matrix in our impurity band model for disordered III-V diluted magnetic semiconductors [PRL 87, 107293 (2000); cond-mat/0111045] is justified: with this choice, the impurity band is placed inside the gap and it has a mobility edge, as expected for a disordered system. The other sign choice, suggested in cond-mat/0111504, leads to an unphysical description of the occupied states of the impurity band (extremely long tail, no mobility edge, no bulk ferromagnetism).
Cite
@article{arxiv.cond-mat/0112165,
title = {Reply to cond-mat/0111504},
author = {Mona Berciu and R. N. Bhatt},
journal= {arXiv preprint arXiv:cond-mat/0112165},
year = {2007}
}
Comments
1 page, 1 figure