Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"

V. M. Pudalov; M. Gershenson; H. Kojima; N. Busch; E. M. Dizhur; G. Brunthaler; A. Prinz; G. Bauer

doi:10.1103/PhysRevLett.89.219702

Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"

Strongly Correlated Electrons 2009-11-07 v1 Mesoscale and Nanoscale Physics

Authors: V. M. Pudalov , M. Gershenson , H. Kojima , N. Busch , E. M. Dizhur , G. Brunthaler , A. Prinz , G. Bauer

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Abstract

Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]

Keywords

spin susceptibility effective mass Si inversion layers mobile electrons comment reply

Cite

@article{arxiv.cond-mat/0206258,
  title  = {Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"},
  author = {V. M. Pudalov and M. Gershenson and H. Kojima and N. Busch and E. M. Dizhur and G. Brunthaler and A. Prinz and G. Bauer},
  journal= {arXiv preprint arXiv:cond-mat/0206258},
  year   = {2009}
}