Reply to "Comment on `Floquet Fractional Chern Insulators'"
Strongly Correlated Electrons
2015-03-10 v1
Abstract
We respond to the comments expressed by L. D'Alessio in arXiv:1412.3481 on our work "Floquet Fractional Chern Insulators" [Phys. Rev. Lett. 112, 156801 (2014)]. We confirm the central result that the ground state of the effective Hamiltonian is an interacting fractional Chern insulator.
Cite
@article{arxiv.1503.02580,
title = {Reply to "Comment on `Floquet Fractional Chern Insulators'"},
author = {Adolfo G. Grushin and Álvaro Gómez-León and Titus Neupert},
journal= {arXiv preprint arXiv:1503.02580},
year = {2015}
}
Comments
2 Pages, 2 figures. Reply to comment arXiv:1412.3481