We examine recombination processes of photocarriers in one-dimensional Mott insulators coupled to phonons. Performing density matrix renormalization group calculations, we find that, even for small electron-phonon coupling, many phonons are generated dynamically, which cause initial relaxation process after the irradiation. At the same time, spin-charge coupling coming from mixing of high- and low-energy states by the irradiation is suppressed. We discuss differences between Mott and band insulators in terms of relaxation dynamics.
@article{arxiv.1005.1690,
title = {Relaxation Dynamics of Photocarriers in One-Dimensional Mott Insulators Coupled to Phonons},
author = {Hiroaki Matsueda and Shigetoshi Sota and Takami Tohyama and Sadamichi Maekawa},
journal= {arXiv preprint arXiv:1005.1690},
year = {2012}
}