Refractory period of an excitable semiconductor laser with optical injection
Optics
2017-02-01 v1
Abstract
Injection-locked semiconductor lasers can be brought to a neuron-like excitable regime when parameters are set close to the unlocking transition. Here we study experimentally the response of this system to repeated optical perturbations and observe the existence of a refractory period during which perturbations are not able to elicit an excitable response. The results are analyzed via simulations of a set of dynamical equations which reproduced adequately the experimental results.
Keywords
Cite
@article{arxiv.1607.03190,
title = {Refractory period of an excitable semiconductor laser with optical injection},
author = {Bruno Garbin and Axel Dolcemascolo and Franco Prati and Julien Javaloyes and Giovanna Tissoni and Stéphane Barland},
journal= {arXiv preprint arXiv:1607.03190},
year = {2017}
}
Comments
9 pages, 11 figures