Reduction of Self-heating effect in LDMOS devices
Emerging Technologies
2016-08-26 v1
Abstract
Isotopic purification of group IV elements leads to substantial increase in thermal conductivity due to reduced scattering of the phonons. Based on this concept, a simulation study is used to demonstrate the reduction of at least 25 oC in LDMOS average temperature.
Cite
@article{arxiv.1608.07233,
title = {Reduction of Self-heating effect in LDMOS devices},
author = {T. K. Maiti and C. K. Maiti},
journal= {arXiv preprint arXiv:1608.07233},
year = {2016}
}
Comments
17 pages, 5 figures
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