English

Reduction of Self-heating effect in LDMOS devices

Emerging Technologies 2016-08-26 v1

Abstract

Isotopic purification of group IV elements leads to substantial increase in thermal conductivity due to reduced scattering of the phonons. Based on this concept, a simulation study is used to demonstrate the reduction of at least 25 oC in LDMOS average temperature.

Cite

@article{arxiv.1608.07233,
  title  = {Reduction of Self-heating effect in LDMOS devices},
  author = {T. K. Maiti and C. K. Maiti},
  journal= {arXiv preprint arXiv:1608.07233},
  year   = {2016}
}

Comments

17 pages, 5 figures

R2 v1 2026-06-22T15:31:05.443Z