Realization of ultra-broadband IR up-conversion imaging
Abstract
Ultra-broadband imaging devices with high performance are in great demand for a variety of technological applications, including imaging, remote sensing, and communications. An ultra-broadband up-converter is realized based on a p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) detector-light emitting diode (LED) device. The device demonstrates an ultra-broad response ranging from visible to terahertz (THz) with good reproducibility. The peak responsivity in the mid-infrared (MIR) region is 140 mA/W at 10.5 microns. The HIWIP-LED shows enormous potential for ultra-broadband up-conversion covering all infrared atmospheric windows, as well as the THz region, and the pixel-less imaging of the MIR spot from the CO2 laser is further demonstrated. In addition, the proposed up-converter also performs as a near-infrared and visible detector under zero bias by using a bi-functional LED. Thanks to its ultra-wide response, the HIWIP-LED up-converter has great promise for stable, high-performance ultra-broadband pixel-less imaging and multi-functional analysis systems.
Cite
@article{arxiv.2205.11717,
title = {Realization of ultra-broadband IR up-conversion imaging},
author = {X. H. Li and P. Bai and S. H. Huang and X. Q. Bai and W. J. Song and X. R. Lian and C. Hu and Z. W. Shi and W. Z. Shen and Y. H. Zhang and Z. L. Fu and D. X. Shao and Z. Y. Tan and J. C. Cao and C. Tan and G. Y. Xu},
journal= {arXiv preprint arXiv:2205.11717},
year = {2022}
}
Comments
23 pages, 5 figures