Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field focusing on developments, since the most recent comprehensive review [1], which enable applications in cryogenic electronic devices.
@article{arxiv.2505.15238,
title = {Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics},
author = {W. F. Holmes-Hewett and J. D. Miller and H. G. Ahmad and S. Granville and B. J. Ruck},
journal= {arXiv preprint arXiv:2505.15238},
year = {2025}
}