Random spin-orbit gates in the system of a Topological insulator and a Quantum dot
Abstract
The spin-dependent scattering process in a system of topological insulator and quantum dot is studied. The unitary scattering process is viewed as a gate transformation applied to an initial state of two electrons. Due to the randomness imposed through the impurities and alloying-induced effects of band parameters, the formalism of the random unitary gates is implemented. For quantifying entanglement in the system, we explored concurrence and ensemble-averaged R\'enyi entropy. We found that applied external magnetic field leads to long-range entanglement on the distances much larger than the confinement length. We showed that topological features of itinerant electrons sustain the formation of robust long-distance entanglement, which survives even in the presence of a strong disorder.
Keywords
Cite
@article{arxiv.2212.11026,
title = {Random spin-orbit gates in the system of a Topological insulator and a Quantum dot},
author = {S. Wolski and M. Inglot and C. Jasiukiewicz and K. A. Kouzakov and T. Masłowski and T. Szczepański and S. Stagraczyński and R. Stagraczyński and V. K. Dugaev and L. Chotorlishvili},
journal= {arXiv preprint arXiv:2212.11026},
year = {2023}
}
Comments
12 pages, 8 figures,