Random Field Driven Spatial Complexity at the Mott Transition in VO2

Shuo Liu; B. Phillabaum; E. W. Carlson; K. A. Dahmen; N. S. Vidhyadhiraja; M. M. Qazilbash; D. N. Basov

doi:10.1103/PhysRevLett.116.036401

Random Field Driven Spatial Complexity at the Mott Transition in VO2

Strongly Correlated Electrons 2016-01-27 v1

Authors: Shuo Liu , B. Phillabaum , E. W. Carlson , K. A. Dahmen , N. S. Vidhyadhiraja , M. M. Qazilbash , D. N. Basov

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Abstract

We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

Keywords

vanadium dioxide phase transition metal-insulator transition

Cite

@article{arxiv.1502.05426,
  title  = {Random Field Driven Spatial Complexity at the Mott Transition in VO2},
  author = {Shuo Liu and B. Phillabaum and E. W. Carlson and K. A. Dahmen and N. S. Vidhyadhiraja and M. M. Qazilbash and D. N. Basov},
  journal= {arXiv preprint arXiv:1502.05426},
  year   = {2016}
}

Comments

6 pages, 5 figures, 1 supplementary information

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