Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Gopal K. Pradhan; Achintya Bera; Pradeep Kumar; D. V. S. Muthu; A. K. Sood

doi:10.1016/j.ssc.2011.11.029

Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Materials Science 2015-06-03 v1 Other Condensed Matter

Authors: Gopal K. Pradhan , Achintya Bera , Pradeep Kumar , D. V. S. Muthu , A. K. Sood

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Abstract

We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral ({\alpha}-Bi2Te3) to monoclinic ({\beta}-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at ~ 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm-1and 135 cm-1. The mode Gr\"uneisen parameters are determined in both the {\alpha} and {\beta}-phases.

Keywords

Bi2Te3 Raman spectroscopy electronic topological transition structural phase transition high pressure

Cite

@article{arxiv.1111.6284,
  title  = {Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3},
  author = {Gopal K. Pradhan and Achintya Bera and Pradeep Kumar and D. V. S. Muthu and A. K. Sood},
  journal= {arXiv preprint arXiv:1111.6284},
  year   = {2015}
}

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