We report Raman forbidden layer-breathing modes (LBMs) in layered semiconductor materials (LSMs). The intensity distribution of all observed LBMs depends on layer number, incident light wavelength and refractive index mismatch between LSM and underlying substrate. These results are understood by a Raman scattering theory via the proposed spatial interference model, where the naturally occurring optical and phonon cavities in LSMs enable spatially coherent photon-phonon coupling mediated by the corresponding one-dimensional periodic electronic states. Our work reveals the spatial coherence of photon and phonon fields on the phonon excitation via photon/phonon cavity engineering.
@article{arxiv.2503.05389,
title = {Raman Forbidden Layer-Breathing Modes in Layered Semiconductor Materials Activated by Phonon and Optical Cavity Effects},
author = {Miao-Ling Lin and Jiang-Bin Wu and Xue-Lu Liu and Tao Liu and Rui Mei and Heng Wu and Shan Guan and Jia-Liang Xie and Jun-Wei Luo and Lin-Wang Wang and Andrea C. Ferrari and Ping-Heng Tan},
journal= {arXiv preprint arXiv:2503.05389},
year = {2025}
}
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Please check the initial version on the website of Research Square at https://doi.org/10.21203/rs.3.rs-4156671/v1