English

Radiative recombination through EL2 centers in gallium arsenide single crystals doped by selenium and cadmium

Materials Science 2009-11-16 v1
Authors: M. B. Litvinova , S. V. Shutov , A. D. Shtan'ko , V. V. Kurak
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Abstract

Influence of Cd and Se atoms on the quantum efficiency of photon emission through EL2 defects in gallium arsenide single crystals has been investigated. A comparative technique of impurity diffusion in vacuum and arsenic atmospheres has been used. The change character and extent of the photon emission quantum efficiency have been established to be defined by vacancy structure of crystal that is most likely caused by formation of EL2-dopant complexes.

Keywords

radiative recombination EL2 center gallium arsenide quantum efficiency impurity diffusion

Cite

@article{arxiv.0911.2650,
  title  = {Radiative recombination through EL2 centers in gallium arsenide single crystals doped by selenium and cadmium},
  author = {M. B. Litvinova and S. V. Shutov and A. D. Shtan'ko and V. V. Kurak},
  journal= {arXiv preprint arXiv:0911.2650},
  year   = {2009}
}

Comments

5 pages, 3 figures

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