English

Radiation hardness of diamond and silicon sensors compared

Instrumentation and Detectors 2015-05-13 v1

Abstract

The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-Carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.

Keywords

Cite

@article{arxiv.0705.0171,
  title  = {Radiation hardness of diamond and silicon sensors compared},
  author = {Wim de Boer and Johannes Bol and Alexander Furgeri and Steffen Mueller and Christian Sander and Eleni Berdermann and Michal Pomorski and Mika Huhtinen},
  journal= {arXiv preprint arXiv:0705.0171},
  year   = {2015}
}

Comments

6 pages, 4 figurs, invited talk at the Hasselt Diamond Workshop, Feb. 2007