English

Quaternionic description of semiconductor position-based qubits

Mesoscale and Nanoscale Physics 2025-06-23 v1

Abstract

The quaternionic description of semiconductor single-electron devices is given in the single-electron regime. The conversion scheme of complex value Hamiltonian into a quaternion is formulated for the case of single-electron semiconductor qubit and many electrostatically interacting qubits. In particular, the quantum evolution operator is presented in quaternion form for the case of one and many electrostatically interacting quantum bodies.

Keywords

Cite

@article{arxiv.2506.16713,
  title  = {Quaternionic description of semiconductor position-based qubits},
  author = {Wojciech Nowakowski and Krzysztof Pomorski},
  journal= {arXiv preprint arXiv:2506.16713},
  year   = {2025}
}

Comments

14 pages, 3 figures

R2 v1 2026-07-01T03:25:59.620Z