Quantum Goos-Hanchen effect in graphene
Abstract
The Goos-Hanchen (GH) effect is an interference effect on total internal reflection at an interface, resulting in a shift sigma of the reflected beam along the interface. We show that the GH effect at a p-n interface in graphene depends on the pseudospin (sublattice) degree of freedom of the massless Dirac fermions, and find a sign change of sigma at angle of incidence alpha*=arcsin[sin alpha_c]^1/2 determined by the critical angle alpha_c for total reflection. In an n-doped channel with p-doped boundaries the GH effect doubles the degeneracy of the lowest propagating mode, introducing a two-fold degeneracy on top of the usual spin and valley degeneracies. This can be observed as a stepwise increase by 8e^2/h of the conductance with increasing channel width.
Cite
@article{arxiv.0901.0072,
title = {Quantum Goos-Hanchen effect in graphene},
author = {C. W. J. Beenakker and R. A. Sepkhanov and A. R. Akhmerov and J. Tworzydlo},
journal= {arXiv preprint arXiv:0901.0072},
year = {2009}
}
Comments
5 pages, 6 figures; expanded version of the published paper (one extra page, one extra figure), including also a reference to J.M. Pereira et al, PRB 74, 045424 (2006)