English

Quantum Diffusion and Localization in Disordered Electronic Systems

Disordered Systems and Neural Networks 2008-07-07 v2

Abstract

The diffusion of electronic wave packets in one-dimensional systems with on-site, binary disorder is numerically investigated within the framework of a single-band tight-binding model. Fractal properties are incorporated by assuming that the distribution of distances \ell between consecutive impurities obeys a power law, P()αP(\ell) \sim \ell^{-\alpha}. For suitable ranges of α\alpha, one finds system-wide anomalous diffusion. Asymmetric diffusion effects are introduced through the application of an external electric field, leading to results similar to those observed in the case of photogenerated electron-hole plasmas in tilted InP/InGaAs/InP quantum wells.

Keywords

Cite

@article{arxiv.0801.0513,
  title  = {Quantum Diffusion and Localization in Disordered Electronic Systems},
  author = {P. R. Wells and J. d'Albuquerque e Castro and S. L. A. de Queiroz},
  journal= {arXiv preprint arXiv:0801.0513},
  year   = {2008}
}

Comments

RevTex4, 6 pages, 6 .eps figures: published version

R2 v1 2026-06-21T09:59:15.932Z