Quantum Diffusion and Localization in Disordered Electronic Systems
Disordered Systems and Neural Networks
2008-07-07 v2
Abstract
The diffusion of electronic wave packets in one-dimensional systems with on-site, binary disorder is numerically investigated within the framework of a single-band tight-binding model. Fractal properties are incorporated by assuming that the distribution of distances between consecutive impurities obeys a power law, . For suitable ranges of , one finds system-wide anomalous diffusion. Asymmetric diffusion effects are introduced through the application of an external electric field, leading to results similar to those observed in the case of photogenerated electron-hole plasmas in tilted InP/InGaAs/InP quantum wells.
Cite
@article{arxiv.0801.0513,
title = {Quantum Diffusion and Localization in Disordered Electronic Systems},
author = {P. R. Wells and J. d'Albuquerque e Castro and S. L. A. de Queiroz},
journal= {arXiv preprint arXiv:0801.0513},
year = {2008}
}
Comments
RevTex4, 6 pages, 6 .eps figures: published version