Quantitative study of molecular N_2 trapped in disordered GaN:O films

B. J. Ruck; A. Koo; U. D. Lanke; F. Budde; S. Granville; H. J. Trodahl; A. Bittar; J. B. Metson; V. J. Kennedy; A. Markwitz

doi:10.1103/PhysRevB.70.235202

Quantitative study of molecular N_2 trapped in disordered GaN:O films

Materials Science 2009-11-10 v1 Disordered Systems and Neural Networks

Authors: B. J. Ruck , A. Koo , U. D. Lanke , F. Budde , S. Granville , H. J. Trodahl , A. Bittar , J. B. Metson , V. J. Kennedy , A. Markwitz

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Abstract

The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N_2 fraction, the level of oxygen impurities, and the absence of short-range order in the GaN:O matrix.

Keywords

molecular N₂ GaN:O films x-ray absorption near-edge spectroscopy Raman spectroscopy disordered structure ion-assisted deposition

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@article{arxiv.cond-mat/0408174,
  title  = {Quantitative study of molecular N_2 trapped in disordered GaN:O films},
  author = {B. J. Ruck and A. Koo and U. D. Lanke and F. Budde and S. Granville and H. J. Trodahl and A. Bittar and J. B. Metson and V. J. Kennedy and A. Markwitz},
  journal= {arXiv preprint arXiv:cond-mat/0408174},
  year   = {2009}
}

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5 pages, 3 figures

Quantitative study of molecular N_2 trapped in disordered GaN:O films

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