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Quantitative analysis of the influence of keV He ion bombardment on exchange bias layer systems

Materials Science 2018-06-05 v1

Abstract

The mechanism of ion bombardment induced magnetic patterning of exchange bias layer systems for creating engineered magnetic stray field landscapes is still unclear. We compare results from vectorial magneto-optic Kerr effect measurements to a recently proposed model with time dependent rotatable magnetic anisotropy. Results show massive reduction of rotational magnetic anisotropy compared to all other magnetic anisotropies. We disprove the assumption of comparable weakening of all magnetic anisotropies and show that ion bombardment mainly influences smaller grains in the antiferromagnet.

Keywords

Cite

@article{arxiv.1704.05487,
  title  = {Quantitative analysis of the influence of keV He ion bombardment on exchange bias layer systems},
  author = {Nicolas David Müglich and Gerhard Götz and Alexander Gaul and Markus Meyl and Günter Reiss and Timo Kuschel and Arno Ehresmann},
  journal= {arXiv preprint arXiv:1704.05487},
  year   = {2018}
}

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5 figures