In this study, we added vacancies adjacent to a Si/Ge interface to create a disordered structure. The structure was then relaxed using various strategies. We applied Procrustes shape analysis for disorder quantification and identifying different local atomic environments.
@article{arxiv.2303.04108,
title = {Quantifying Atomic Structural Disorder Using Procrustes Shape Analysis},
author = {Jinchen Han and Henry T. Aller and Alan J. H. McGaughey},
journal= {arXiv preprint arXiv:2303.04108},
year = {2023}
}