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Properties of a rare-earth-ion-doped waveguide at sub-Kelvin temperatures for quantum signal processing

Quantum Physics 2017-03-21 v2

Abstract

We characterize the 795 nm 3^3H6_6 to 3^3H4_4 transition of Tm3+^{3+} in a Ti4+^{4+}:LiNbO3_{3} waveguide at temperatures as low as 800 mK. Coherence and hyperfine population lifetimes -- up to 117 μ\mus and 2.5 hours, respectively -- exceed those at 3 K at least ten-fold, and are equivalent to those observed in a bulk Tm3+^{3+}:LiNbO3_{3} crystal under similar conditions. We also find a transition dipole moment that is equivalent to that of the bulk. Finally, we prepare a 0.5 GHz-bandwidth atomic frequency comb of finesse >>2 on a vanishing background. These results demonstrate the suitability of rare-earth-doped waveguides created using industry-standard Ti-indiffusion in LiNbO3_3 for on-chip quantum applications.

Keywords

Cite

@article{arxiv.1605.02396,
  title  = {Properties of a rare-earth-ion-doped waveguide at sub-Kelvin temperatures for quantum signal processing},
  author = {Neil Sinclair and Daniel Oblak and Charles W. Thiel and Rufus L. Cone and Wolfgang Tittel},
  journal= {arXiv preprint arXiv:1605.02396},
  year   = {2017}
}

Comments

6 pages, 4 figures