Probing the surface states in Bi2Se3 using the Shubnikov-de Haas effect

M. Petrushevsky; E. Lahoud; A. Ron; E. Maniv; I. Diamant; I. Neder; S. Wiedmann; V. K. Guduru; F. Chiappini; U. Zeitler; J. C. Maan; K. Chashka; A. Kanigel; Y. Dagan

doi:10.1103/PhysRevB.86.045131

Probing the surface states in Bi2Se3 using the Shubnikov-de Haas effect

Mesoscale and Nanoscale Physics 2016-03-10 v4 Strongly Correlated Electrons

Authors: M. Petrushevsky , E. Lahoud , A. Ron , E. Maniv , I. Diamant , I. Neder , S. Wiedmann , V. K. Guduru , F. Chiappini , U. Zeitler , J. C. Maan , K. Chashka , A. Kanigel , Y. Dagan

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Abstract

Shubnikov-de Haas (SdH) oscillations are observed in Bi2Se3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass and Dingle temperature. The Fermi momentum obtained is in agreement with angle resolved photoemission spectroscopy (ARPES) measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic field. The standard theoretical considerations fail to explain the observed behavior.

Keywords

Shubnikov-de Haas effect Bi2Se3 surface states topological insulator Berry phase ARPES

Cite

@article{arxiv.1106.3747,
  title  = {Probing the surface states in Bi2Se3 using the Shubnikov-de Haas effect},
  author = {M. Petrushevsky and E. Lahoud and A. Ron and E. Maniv and I. Diamant and I. Neder and S. Wiedmann and V. K. Guduru and F. Chiappini and U. Zeitler and J. C. Maan and K. Chashka and A. Kanigel and Y. Dagan},
  journal= {arXiv preprint arXiv:1106.3747},
  year   = {2016}
}

Comments

6 pages, 8 figures. Accepted to Physical Review B

Probing the surface states in Bi2Se3 using the Shubnikov-de Haas effect

Abstract

Keywords

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