Probing confined interfacial excitations in buried layers by Brillouin light scattering
Materials Science
2009-11-07 v1
Abstract
Brillouin light scattering from silicon oxynitride films grown on GaAs reveals a low frequency elastic wave excitation at frequencies lying below that of the Rayleigh surface wave. This mode, identified as an excitation localized by the interface, arises from the presence of a soft, thin transition layer between the film and substrate. Observations of this low frequency excitation offer a previously unexplored approach to characterize, non-destructively, the properties of buried interfaces.
Keywords
Cite
@article{arxiv.cond-mat/0111046,
title = {Probing confined interfacial excitations in buried layers by Brillouin light scattering},
author = {Xinya Zhang and R Sooryakumar},
journal= {arXiv preprint arXiv:cond-mat/0111046},
year = {2009}
}
Comments
4 pages, 4 figures, key words: interface, interfacial waves, guided acoustic waves, acoustic waveguide