We report the results of high pressure x-ray diffraction, x-ray absorption, and electrical transport measurements of Kondo insulator Ce3Bi4Pt3 up to 42 GPa, the highest pressure reached in the study of any Ce-based KI. We observe a smooth decrease in volume and movement toward intermediate Ce valence with pressure, both of which point to increased electron correlations. Despite this, temperature-dependent resistance data show the suppression of the interaction-driven ambient pressure insulating ground state. We also discuss potential ramifications of these results for the predicted topological KI state.
@article{arxiv.1907.09017,
title = {Pressure-Driven Valence Increase and Metallization in Kondo Insulator Ce$_3$Bi$_4$Pt$_3$},
author = {Daniel J. Campbell and Zachary E. Brubaker and Connor Roncaioli and Prathum Saraf and Yuming Xiao and Paul Chow and Curtis Kenney-Benson and Dmitry Popov and Rena J. Zieve and Jason R. Jeffries and Johnpierre Paglione},
journal= {arXiv preprint arXiv:1907.09017},
year = {2020}
}