Precision analysis of Geant4 condensed transport effects on energy deposition in detectors

M. Batic; G. Hoff; M. G. Pia

doi:10.1088/1742-6596/396/2/022004

Precision analysis of Geant4 condensed transport effects on energy deposition in detectors

Computational Physics 2015-06-11 v1

Authors: M. Batic , G. Hoff , M. G. Pia

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Abstract

A comprehensive analysis of the effects of Geant4 algorithms for condensed transport in detectors is in progress. The first phase of the project focuses on electron multiple scattering, and studies two related observables: the longitudinal pattern of energy deposition in various materials, and the fraction of backscattered particles. The quality of the simulation is evaluated through comparison with high precision experimental measurements; several versions of Geant4 are analyzed to provide an extensive overview of the evolution of Geant4 multiple scattering algorithms and of their contribution to simulation accuracy.

Keywords

geant4 condensed transport energy deposition electron multiple scattering detector simulation backscattered particles precision analysis

Cite

@article{arxiv.1209.6003,
  title  = {Precision analysis of Geant4 condensed transport effects on energy deposition in detectors},
  author = {M. Batic and G. Hoff and M. G. Pia},
  journal= {arXiv preprint arXiv:1209.6003},
  year   = {2015}
}

Comments

To be published in the Proc. of CHEP (Computing in High Energy Physics) 2012

Precision analysis of Geant4 condensed transport effects on energy deposition in detectors

Abstract

Keywords

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