Piezo-Magneto-Electric Effects in p-Doped Semiconductors
Other Condensed Matter
2009-11-10 v1
Abstract
We predict the appearance of a uniform magnetization in strained three dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.
Cite
@article{arxiv.cond-mat/0408476,
title = {Piezo-Magneto-Electric Effects in p-Doped Semiconductors},
author = {B. Andrei Bernevig and Oskar Vafek},
journal= {arXiv preprint arXiv:cond-mat/0408476},
year = {2009}
}
Comments
4 pages, 3 figures